发明名称 THERMAL SPREADER HAVING GRADUATED THERMAL EXPANSION PARAMETERS
摘要 PROBLEM TO BE SOLVED: To provide: a method of manufacturing an integrated circuit (IC) device comprising a thermal spreader having graduated thermal expansion parameters; and a system incorporating the IC device.SOLUTION: An apparatus comprises: a die 108; a thermal spreader 112 having a first layer 136 with a first coefficient of thermal expansion (CTE) and a second layer 140 with a second CTE that is greater than the first CTE, where the die is coupled with the first layer 136; and a heat sink 120 coupled with the second layer 140 of the thermal spreader 112.
申请公布号 JP2013243362(A) 申请公布日期 2013.12.05
申请号 JP20130103890 申请日期 2013.05.16
申请人 TRIQUINT SEMICONDUCTOR INC 发明人 DYLAN MURDOCK;LAWRENCE GIACOMA
分类号 H01L23/40 主分类号 H01L23/40
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