发明名称 |
THERMAL SPREADER HAVING GRADUATED THERMAL EXPANSION PARAMETERS |
摘要 |
PROBLEM TO BE SOLVED: To provide: a method of manufacturing an integrated circuit (IC) device comprising a thermal spreader having graduated thermal expansion parameters; and a system incorporating the IC device.SOLUTION: An apparatus comprises: a die 108; a thermal spreader 112 having a first layer 136 with a first coefficient of thermal expansion (CTE) and a second layer 140 with a second CTE that is greater than the first CTE, where the die is coupled with the first layer 136; and a heat sink 120 coupled with the second layer 140 of the thermal spreader 112. |
申请公布号 |
JP2013243362(A) |
申请公布日期 |
2013.12.05 |
申请号 |
JP20130103890 |
申请日期 |
2013.05.16 |
申请人 |
TRIQUINT SEMICONDUCTOR INC |
发明人 |
DYLAN MURDOCK;LAWRENCE GIACOMA |
分类号 |
H01L23/40 |
主分类号 |
H01L23/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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