SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress an area for consuming a material gas around a substrate support part of a boat; and improve uniformity in a film thickness on a substrate.SOLUTION: A semiconductor device manufacturing method comprises: a substrate mounting process of mounting on a substrate holding medium which exposes quarts or silicon carbide, a substrate which exposes a silicon surface and an insulation film surface; a carry-in process of carrying in the substrate holding medium on which the substrate is mounted into a processing chamber for processing the substrate; a selective growth step of selectively growing a silicon epitaxial film on the silicon surface of the substrate mounted on the substrate holding medium by concurrently or alternately supplying a silicon-containing gas and an etching gas to the processing chamber; and a carry-out process of carrying out the substrate from the processing chamber after the selective growth process.