发明名称 |
METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING IMPROVED SPACERS |
摘要 |
Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate having a gate structure. An atomic layer deposition (ALD) process is performed to deposit a spacer around the gate structure. The ALD process includes alternating flowing ionized radicals of a first precursor across the semiconductor substrate and flowing a chlorosilane precursor across the semiconductor substrate to deposit the spacer. |
申请公布号 |
US2013323923(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213482871 |
申请日期 |
2012.05.29 |
申请人 |
KOEHLER FABIAN;MUTAS SERGEJ;TRIYOSO DINA;HUSSAIN ITASHAM;GLOBALFOUNDRIES INC. |
发明人 |
KOEHLER FABIAN;MUTAS SERGEJ;TRIYOSO DINA;HUSSAIN ITASHAM |
分类号 |
H01L21/283;H01L21/31 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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