发明名称 |
Self-Aligned Implantation Process for Forming Junction Isolation Regions |
摘要 |
A device includes a semiconductor substrate, a well region in the semiconductor substrate, and a Metal-Oxide-Semiconductor (MOS) device. The MOS device includes a gate dielectric overlapping the well region, a gate electrode over the gate dielectric, and a source/drain region in the well region. The source/drain region and the well region are of opposite conductivity types. An edge of the first source drain region facing away from the gate electrode is in contact with the well region to form a junction isolation. |
申请公布号 |
US2013320418(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213588879 |
申请日期 |
2012.08.17 |
申请人 |
TSENG CHIEN-HSIEN;WUU SHOU-GWO;CHEN CHIA-CHAN;WU KUO-YU;YANG DAO-HONG;CHUNG MING-HAO;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSENG CHIEN-HSIEN;WUU SHOU-GWO;CHEN CHIA-CHAN;WU KUO-YU;YANG DAO-HONG;CHUNG MING-HAO |
分类号 |
H01L31/113;H01L21/336 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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