发明名称 |
EFFICIENT SCAN FOR E-BEAM LITHOGRAPHY |
摘要 |
The present disclosure provides a method of increasing the wafer throughput by an electron beam lithography system. The method includes scanning a wafer using the maximum scan slit width (MSSW) of the electron beam writer. By constraining the integrated circuit (IC) field size to allow the MSSW to cover a complete field, the MSSW is applied to decrease the scan lanes of a wafer and thereby increase the throughput. When scanning the wafer with the MSSW, the next scan lane data can be rearranged and loaded into a memory buffer. Thus, once one scan lane is finished, the next scan lane data in the memory buffer is read for scanning. |
申请公布号 |
US2013320243(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213484524 |
申请日期 |
2012.05.31 |
申请人 |
CHEN CHENG-HUNG;WANG SHIH-CHI;CHEN JENG-HORNG;LIN BURN JENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHENG-HUNG;WANG SHIH-CHI;CHEN JENG-HORNG;LIN BURN JENG |
分类号 |
G21K5/10 |
主分类号 |
G21K5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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