发明名称 |
METHOD OF FORMING AN ACTIVE PATTERN, DISPLAY SUBSTRATE FORMED BY THE SAME, AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE |
摘要 |
In a method of forming an active pattern, a gate metal layer is formed on a base substrate. The gate metal layer is patterned to form a gate line, and a gate pattern spaced apart from the gate line. A gate insulation layer is formed on the base substrate including the gate line and the gate pattern thereon, to form a first protruded boundary surface corresponding to an area including the gate pattern. An amorphous semiconductor layer is formed on the base substrate including the gate insulation layer thereon, to form a second protruded boundary surface corresponding to the first protruded boundary surface. The amorphous semiconductor layer is crystallized by illuminating a laser to the amorphous semiconductor layer on the second protruded boundary surface. |
申请公布号 |
US2013320345(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213656976 |
申请日期 |
2012.10.22 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
IM WAN-SOON;SONG YOUNG-GOO;JUNG HWA-DONG |
分类号 |
H01L29/786;H01L21/20;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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