| 摘要 |
A semiconductor device is provided which is used as a power device for a high-power application, includes an oxide semiconductor, and has high withstand voltage and high reliability. A semiconductor device for a high-power application with high productivity is also provided. In a crystal part included in an oxide semiconductor film having a crystalline structure, a c-axis is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed or a normal vector of a surface of the oxide semiconductor film, triangular or hexagonal atomic arrangement which is seen from the direction perpendicular to the a-b plane is formed, and metal atoms are arranged in a layered manner or metal atoms and oxygen atoms are arranged in a layered manner when seen from the direction perpendicular to the c-axis. |
