ALGAINP LIGHT EMITTING DIODE WITH N-TYPE ALAS BOTTOM WINDOW LAYER AND FABRICATION THEREOF

摘要

The present invention relates to an AlGaInP-group light emitting diode and a manufacturing method thereof. In order to enhance the light emitting efficiency of an AlGaInP-group light emitting diode, a thick window layer with a bigger band gap and a smaller resistance than AlGaInP is grown below an n-type AlGaInP confining layer. The AlGaInP-group light emitting diode given in the present invention includes an active layer which is made of un-doped AlGaInP; an upper confining layer which is made of p-type AlGaInP on the active layer; a lower confining layer which is made of n-type AlGaInP below the active layer; a lower window layer which is made of n-type AlAs below the lower confining layer; and a substrate which is made of n-type GaAs below the lower window layer. The n-type AlAs lower window layer of the AlGaInP-group light emitting diode can be formed through a common deposition method and can enhance the lateral-side light emitting efficiency of the light emitting diode without having impact on the voltage-current characteristic and the growth.