| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method capable of improving surface cleanness of a semiconductor wafer by maintaining an Al concentration in an ammonia-hydrogen peroxide cleaning liquid at a low concentration.SOLUTION: In a method for cleaning a semiconductor wafer, a cleaning liquid including ammonia and a hydrogen peroxide solution is injected in a washing tank comprising a synthetic quartz having an average Al concentration of 1 ppb or less, the semiconductor wafer is immersed in the cleaning liquid, and a surface etching rate of the synthetic quartz by the cleaning liquid is adjusted to 0.3 nm/min or less to clean the semiconductor wafer. |
