SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To read a memory cell at high speed by large current while preventing read disturbance of the memory cell using a spin injection magnetization reversal.SOLUTION: A semiconductor device comprises: a plurality of word lines WL; a plurality of bit lines BL; a plurality of memory cells MC; readout circuits SA and LA which read information from selected memory cells; and rewriting circuits WD1 and WD2 which perform rewriting to the selected memory cells on the basis of the information which the readout circuits SA and LA read. Periods when the readout circuits SA and LA read the information from the selected memory cells are shorter than periods when the rewriting circuits WD1 and WD2 write the information in the selected memory cells on the basis of the information which the readout circuits SA and LA have read.