| 摘要 |
<p>A method of etching silicon recess of contact holes is provided, comprising the following steps: (S310) providing a wafer forming contact holes by etching an ILD, using photoresist as a mask; (S320) removing the photoresist; (S330) etching the silicon recess of contact holes, using a oxide layer on the surface of the ILD as a mask. Using the oxide layer on the surface of the ILD as a hard mask for etching the silicon recess of contact holes after removal of the photoresist, compared with the traditional technology using photoresist as a mask, can obtain a better aspect of silicon recess of contact holes.</p> |
