GERMANIUM FIN FET HAVING METAL GATE AND STRESSOR

摘要

PROBLEM TO BE SOLVED: To provide a germanium fin FET having a metal gate and a stressor.SOLUTION: A plurality of first germanium fins are provided directly on a semiconductor substrate. An n-type fin FET 150 consists of a first gate dielectric 132 on the upper surface and sidewall of the first germanium fin 124, and a first gate electrode 134 on the first gate dielectric. A plurality of second germanium fins are provided directly on a semiconductor substrate. The second germanium fins 224 are separated physically from each other, and interconnected electrically. A p-type fin FET 250 consists of a second gate dielectric 232 on the upper surface and sidewall of the second germanium fin, and a second gate electrode 234 on the second gate dielectric. The first gate electrode and second gate electrode are formed of the same material having a work function between 4.25-4.4 eV.