发明名称 METHOD OF LASER IRRADIATION, LASER IRRADIATION APPARATUS, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.
申请公布号 US2013323866(A1) 申请公布日期 2013.12.05
申请号 US201313962984 申请日期 2013.08.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO;MORIWAKA TOMOAKI
分类号 G02B27/18;H01L33/08;B23K26/06;B23K26/073;B23K26/08;B23K101/40;G02B27/09;G02F1/37;H01L21/20;H01L21/265;H01L21/268;H01L21/77;H01L21/84;H01L27/32;H01L51/52;H01S3/00;H01S5/40 主分类号 G02B27/18
代理机构 代理人
主权项
地址