| 摘要 |
A production method of aluminum based group III nitride single crystal includes a reaction step, wherein a halogenated gas and an aluminum contact at 300� C. or more to 700� C. or less, producing a mixed gas including an aluminum trihalide gas and an aluminum monohalide gas; a converting step, wherein the aluminum monohalide gas is converted to a solid by setting a temperature of the mixed gas equal to or higher than a temperature to which a solid aluminum trihalide deposit, and lower by 50� C. or more than a temperature to which halogenated gas and aluminum contact in the reaction step; a separation step, wherein the aluminum trihalide gas is removed; and a crystal growth step, wherein the aluminum trihalide gas is used for an aluminum based group III nitride single crystal raw material, keeping its temperature equal to or higher than a temperature of the converting step. |
