发明名称 |
A MULTIFERRO-HETEROSTRUCTURE COMPOSITION HAVING TUNABLE MAGNETIC COUPLING AT ROOM TEMPERATURE |
摘要 |
<p>A ferromagnetic / ferroelectric heterostructure thin film is disclosed that exhibits significant magneto-electric coupling. The ferromagnetic / ferroelectric heterostructure thin film includes a) a base layer of silicon substrate, b) a first copper layer deposited on the silicon substrate, c) a first iron layer deposited on the copper layer, d) first aluminum layer deposited on the first iron layer, e) a polymer layer exhibiting ferroelectric properties deposited on the first aluminum layer, f) a second aluminum layer deposited on the polymer layer; g) a second iron layer deposited on the second aluminum layer, and h) a second copper layer deposited on the second iron layer.</p> |
申请公布号 |
WO2013181370(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
WO2013US43326 |
申请日期 |
2013.05.30 |
申请人 |
BOARD OF GOVERNORS FOR HIGHER EDUCATION, STATE OFRHODE |
发明人 |
CHENG, RUIHUA;YANG, KEN, QUING |
分类号 |
B32B15/04;H01F10/14 |
主分类号 |
B32B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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