| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing composition capable of being used as an alternative of a polishing composition containing cerium oxide abrasive grains for use in specific chemical mechanical polishing such as shallow trench separation.SOLUTION: A polishing composition of the present invention contains a water-soluble polymer and an abrasive grain. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound includes polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly(2-acrylamide-2-methylpropane sulfonic acid), and polyisoprene sulfonic acid. The abrasive grain exhibits a negative zeta potential at pH of 3.5 or less. A specific example of such an abrasive grain includes colloidal silica. |
