发明名称 |
Apparatus for CVD and ALD with an Elongate Nozzle and Methods Of Use |
摘要 |
Provided are atomic layer deposition apparatus and methods including a processing chamber with a substrate support at least one elongate nozzle movable relative to the substrate support. The processing chamber has a first gas at a first pressure and a second gas is provided from the elongate nozzle at a second pressure greater than the first pressure. |
申请公布号 |
US2013323422(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213482552 |
申请日期 |
2012.05.29 |
申请人 |
PEIDOUS IGOR;APPLIED MATERIALS, INC. |
发明人 |
PEIDOUS IGOR |
分类号 |
C23C16/458;C23C16/455;C23C16/46 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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