发明名称 Techniques for Electromigration Stress Determination in Interconnects of an Integrated Circuit
摘要 In one or more embodiments, one or more methods, processes, and/or systems described can determine stress failures in interconnect segments of integrated circuit designs and correct those failure via modifying the interconnect segments of the integrated circuit designs with one or more additions to the interconnect segments of the integrated circuit designs. Potentials can be received from a simulation, and one or more failures of an interconnect segment can be determined via the potentials from the simulation. For example, a failure can be determined via a comparison with a potential from the simulation and a critical potential. An interconnect segment can be modified with a stub such that a comparison with a potential from the simulation and a critical potential to provide a non-failing, modified interconnect segment.
申请公布号 US2013326448(A1) 申请公布日期 2013.12.05
申请号 US201313964344 申请日期 2013.08.12
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 DEMIRCAN ERTUGRUL;SHROFF MEHUL D.
分类号 G06F17/50 主分类号 G06F17/50
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