| 摘要 |
PROBLEM TO BE SOLVED: To prevent a film thickness of a first gate region from being thinned more than necessary and prevent the film from disappearing.SOLUTION: In a silicon carbide semiconductor device manufacturing method, formation of a first recess 18 that composes a first layer mesa part is performed after formation of a second recess 19 that composes a second layer mesa part. By doing this, before selective etching in formation of the first recess 18, a film thickness of an ntype layer 4 can be detected based on PN junction between a ptype layer 3 and the ntype layer 4 at a stepped part by the second recess 19 in a boundary between a field relaxation region R2 and a circumferential region R3 by SEM observation. Accordingly, because etching by about a film thickness of the ntype layer 4 can be accurately performed when the first recess 18 is formed and an etching depth can be accurately controlled, the ptype layer 3 for composing a first gate region 3a can be prevented from being thinned more than necessary and the layer can be prevented from disappearing. |
