SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device having an electric field relaxation structure capable of being easily formed.SOLUTION: A silicon carbide substrate 100 comprises: a first layer 121 having a first conductivity type; a second layer 122 provided on the first layer 121 and having a second conductivity type; and a third layer 123 provided on the second layer 122 and added with an impurity for imparting the first conductivity type. The silicon carbide substrate 100 further includes a trench TR reaching the first layer 121 through the third layer 123 and the second layer 122. The first layer 121 has a concentration peak of the impurity at a position apart from the trench TR in the first layer 121.