| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory element capable of suppressing insulation failure, and a method for manufacturing the magnetic memory element.SOLUTION: A magnetic memory element according to an embodiment includes: a first magnetic layer 13; a second magnetic layer 15; an intermediate layer 14 disposed between the first magnetic layer and the second magnetic layer; a layer 12 which is disposed on a face of the first magnetic layer, the face being opposite of a face where the intermediate layer is disposed, and includes B and one or more elements selected from among Hf, Al and Mg; and an insulation layer 20 which is disposed on a side wall of the intermediate layer and includes one or more elements selected from among Hf, Al and Mg included in the layer. |
