发明名称 |
MEMORY DEVICE TO CORRECT DEFECT CELL GENERATED AFTER PACKAGING |
摘要 |
A memory device to correct a defect cell generated after packing is performed includes a memory cell array in which a plurality of memory cells are arranged, a repair circuit unit including a first storage unit to store defect cell information in the memory cell array, and a fuse circuit unit including a second storage unit that is programmed according to the defect cell information stored in the first storage unit. The first storage unit includes a volatile memory device, and the second storage unit includes a non-volatile memory device. |
申请公布号 |
US2013322160(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201313799967 |
申请日期 |
2013.03.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHEOL;SHIN SANG-HO;KIM JUNG-SIK |
分类号 |
G11C29/04 |
主分类号 |
G11C29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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