发明名称 |
Methods of forming a through via structure |
摘要 |
Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors. |
申请公布号 |
US2013323875(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201313803821 |
申请日期 |
2013.03.14 |
申请人 |
PARK BYUNG-JUN;SHIN SEUNG-HUN |
发明人 |
PARK BYUNG-JUN;SHIN SEUNG-HUN |
分类号 |
H01L31/0224;H01L21/768 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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