发明名称 MEMORY CELL SENSING
摘要 This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data.
申请公布号 US2013322170(A1) 申请公布日期 2013.12.05
申请号 US201213486767 申请日期 2012.06.01
申请人 GOLDMAN MATTHEW;KALAVADE PRANAV;CHANDRASEKHAR UDAY;HELM MARK A.;MICRON TECHNOLOGY, INC. 发明人 GOLDMAN MATTHEW;KALAVADE PRANAV;CHANDRASEKHAR UDAY;HELM MARK A.
分类号 G11C16/28;G11C16/04 主分类号 G11C16/28
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