发明名称 |
FIELD FOCUSING FEATURES IN A RERAM CELL |
摘要 |
A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters (911, 1211) including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive electrode or the second conductive electrode. |
申请公布号 |
US2013320285(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213486690 |
申请日期 |
2012.06.01 |
申请人 |
ZHOU FENG;BAKER, JR. FRANK K.;CHANG KO-MIN;HONG CHEONG MIN |
发明人 |
ZHOU FENG;BAKER, JR. FRANK K.;CHANG KO-MIN;HONG CHEONG MIN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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