| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit exposure method and an exposure device, which achieve high precision in pattern transfer.SOLUTION: In a semiconductor circuit exposure method of a present embodiment, after exposing EUV light on a first reflection type mask on which a circuit pattern region is formed, the circuit pattern region and a light-shielding frame region are transferred by a projection optical system via a second reflection type mask on which a light-shielding frame region is formed. Accordingly, adhesion to the circuit pattern region of particles from a processing surface generated by a digging process of a multilayer reflective layer when the light-shielding frame region is formed can be prevented. By using an exposure device and the exposure method of the present embodiment, degradation of the semiconductor circuit can be inhibited. |
