发明名称 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
摘要 Disclosed herein is a substrate including: a base substrate; an insulating layer formed on an upper portion of the base substrate; a circuit layer formed in a form in which it is buried in the insulating layer; at least one electrode formed on upper portions of the circuit layer and the insulating layer and having a prominence and depression formed at a side thereof; and a dielectric layer formed in a form in which it surrounds the side of the electrode.
申请公布号 US2013320492(A1) 申请公布日期 2013.12.05
申请号 US201313895260 申请日期 2013.05.15
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 YANG JU HWAN;KIM YONG SUK;YOO YOUNG SEUCK;WI SUNG KWON
分类号 H01L49/02 主分类号 H01L49/02
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