发明名称 |
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE |
摘要 |
Disclosed herein is a substrate including: a base substrate; an insulating layer formed on an upper portion of the base substrate; a circuit layer formed in a form in which it is buried in the insulating layer; at least one electrode formed on upper portions of the circuit layer and the insulating layer and having a prominence and depression formed at a side thereof; and a dielectric layer formed in a form in which it surrounds the side of the electrode. |
申请公布号 |
US2013320492(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201313895260 |
申请日期 |
2013.05.15 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
YANG JU HWAN;KIM YONG SUK;YOO YOUNG SEUCK;WI SUNG KWON |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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