发明名称 |
LATE IN-SITU DOPED SIGE JUNCTIONS FOR PMOS DEVICES ON 28 NM LOW POWER/HIGH PERFORMANCE TECHNOLOGIES USING A SILICON OXIDE ENCAPSULATION, EARLY HALO AND EXTENSION IMPLANTATIONS |
摘要 |
A HKMG device with PMOS eSiGe source/drain regions is provided. Embodiments include forming first and second HKMG gate stacks on a substrate, forming a nitride liner and oxide spacers on each side of each HKMG gate stack, performing halo/extension implants at each side of each HKMG gate stack, forming an oxide liner and nitride spacers on the oxide spacers of each HKMG gate stack, forming deep source/drain regions at opposite sides of the second HKMG gate stack, forming an oxide hardmask over the second HKMG gate stack, forming embedded silicon germanium (eSiGe) at opposite sides of the first HKMG gate stack, and removing the oxide hardmask. |
申请公布号 |
US2013320449(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213482393 |
申请日期 |
2012.05.29 |
申请人 |
HOENTSCHEL JAN;ONG SHIANG YANG;FLACHOWSKY STEFAN;SCHEIPER THILO;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
HOENTSCHEL JAN;ONG SHIANG YANG;FLACHOWSKY STEFAN;SCHEIPER THILO |
分类号 |
H01L21/8238;H01L21/336;H01L27/088 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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