METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK

摘要

A method for correcting errors on a wafer processed by a photolithographic mask at a wafer processing site is provided. The method comprises measuring errors on the wafer, and modifying a pattern placement on the photolithographic mask by locally applying femtosecond light pulses of a laser system to the photolithographic mask at the wafer processing site.