发明名称 RF BUFFER CIRCUIT WITH DYNAMIC BIASING
摘要 PROBLEM TO BE SOLVED: To provide an RF buffer circuit which reduces peak gate-to-drain voltages and allows improved reliability of MOS devices in a configuration amenable to low phase noise and low power consumption.SOLUTION: An RF buffer circuit for a voltage controlled oscillator (VCO) includes dynamic biasing circuitry to selectively flip the phase of the output voltage waveform. In a CMOS implementation, a PMOS/NMOS pair is employed in an output path. During a high (voltage) swing mode condition, the phase of the output is flipped such that the output waveform is in phase with the voltages appearing at the gates of the PMOS/NMOS pair.
申请公布号 JP2013243765(A) 申请公布日期 2013.12.05
申请号 JP20130159885 申请日期 2013.07.31
申请人 QUALCOMM INC 发明人 RAJAGOPALAN RANGARAJAN;CHINMAYA MISHRA
分类号 H03F3/30;H03F1/26;H03F1/56 主分类号 H03F3/30
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