发明名称 |
RF BUFFER CIRCUIT WITH DYNAMIC BIASING |
摘要 |
PROBLEM TO BE SOLVED: To provide an RF buffer circuit which reduces peak gate-to-drain voltages and allows improved reliability of MOS devices in a configuration amenable to low phase noise and low power consumption.SOLUTION: An RF buffer circuit for a voltage controlled oscillator (VCO) includes dynamic biasing circuitry to selectively flip the phase of the output voltage waveform. In a CMOS implementation, a PMOS/NMOS pair is employed in an output path. During a high (voltage) swing mode condition, the phase of the output is flipped such that the output waveform is in phase with the voltages appearing at the gates of the PMOS/NMOS pair. |
申请公布号 |
JP2013243765(A) |
申请公布日期 |
2013.12.05 |
申请号 |
JP20130159885 |
申请日期 |
2013.07.31 |
申请人 |
QUALCOMM INC |
发明人 |
RAJAGOPALAN RANGARAJAN;CHINMAYA MISHRA |
分类号 |
H03F3/30;H03F1/26;H03F1/56 |
主分类号 |
H03F3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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