| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element capable of improving avalanche resistance even when a chip size of an element is small.SOLUTION: A connection layer 13 is formed on one main surface of a first conductivity type semiconductor base substance 11 having a pair of main surfaces, and a second conductivity type first semiconductor layer 14 is brought into ohmic contact with the connection layer 13 at a terminal part of the connection layer 13 to form a pn junction between the semiconductor base substance 11 and the first semiconductor layer 14. A plurality of second conductivity type second semiconductor layers 15 are discretely arranged on the one main surface of the semiconductor base substance 11 and brought into contact with the connection layer 13 to form a pn junction between the semiconductor base substance 11 and the second semiconductor layers 15. The first semiconductor layer 14 and the second semiconductor layers 15 are formed such that the yield voltage of the pn junction of the first semiconductor layer 14 is same as the yield voltage of the pn junction of the second semiconductor layers 15. |
