| 发明名称 |
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device. |
| 申请公布号 |
US2013320358(A1) |
申请公布日期 |
2013.12.05 |
| 申请号 |
US201213540445 |
申请日期 |
2012.07.02 |
| 申请人 |
CHANG YUAN-HSIAO;PHOSTEK, INC. |
发明人 |
CHANG YUAN-HSIAO |
| 分类号 |
H01L29/06;H01L21/78;H01L31/0352;H01L33/20 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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