发明名称 Semiconductor Isolation Structure with Air Gaps in Deep Trenches
摘要 A device includes a semiconductor substrate, a contact plug over the semiconductor substrate, and an Inter-Layer Dielectric (ILD) layer over the semiconductor substrate, with the contact plug being disposed in the ILD. An air gap is sealed by a portion of the ILD and the semiconductor substrate. The air gap forms a full air gap ring encircling a portion of the semiconductor substrate.
申请公布号 US2013320459(A1) 申请公布日期 2013.12.05
申请号 US201213486265 申请日期 2012.06.01
申请人 SHUE HONG-SENG;YANG TAI-I;WU WEI-DING;CHUNG MING-TAI;YU SHAO-CHI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SHUE HONG-SENG;YANG TAI-I;WU WEI-DING;CHUNG MING-TAI;YU SHAO-CHI
分类号 H01L27/088;H01L21/336 主分类号 H01L27/088
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