发明名称 |
Semiconductor Isolation Structure with Air Gaps in Deep Trenches |
摘要 |
A device includes a semiconductor substrate, a contact plug over the semiconductor substrate, and an Inter-Layer Dielectric (ILD) layer over the semiconductor substrate, with the contact plug being disposed in the ILD. An air gap is sealed by a portion of the ILD and the semiconductor substrate. The air gap forms a full air gap ring encircling a portion of the semiconductor substrate. |
申请公布号 |
US2013320459(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213486265 |
申请日期 |
2012.06.01 |
申请人 |
SHUE HONG-SENG;YANG TAI-I;WU WEI-DING;CHUNG MING-TAI;YU SHAO-CHI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SHUE HONG-SENG;YANG TAI-I;WU WEI-DING;CHUNG MING-TAI;YU SHAO-CHI |
分类号 |
H01L27/088;H01L21/336 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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