发明名称 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF
摘要 A data saving period control circuit; a power gating control circuit; and a data processing circuit including a general-purpose register, an error correction code storage register, and an error correction code circuit are included. The general-purpose register and the error correction code storage register each include a volatile memory unit and a nonvolatile memory unit. The data saving period control circuit is a circuit for changing a length of a data saving period in which data output from the power gating control circuit is saved from the volatile memory unit to the nonvolatile memory unit included in the general-purpose register, depending on whether an error in an error correction code stored in the error correction code storage register is detected by the error correction code circuit.
申请公布号 US2013326309(A1) 申请公布日期 2013.12.05
申请号 US201313900578 申请日期 2013.05.23
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YONEDA SEIICHI
分类号 G06F11/10;G11C14/00 主分类号 G06F11/10
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