METHOD FOR MANUFACTURING IMAGING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

This method for manufacturing an imaging device (10) has the following steps: a step in which a plurality of light-receiving parts (31) are formed on a first principal surface (30SA) and an imaging-chip substrate (30W) on which an electrode pad (32) is formed around each light-receiving part (31) is diced to produce a plurality of imaging chips (30); a step in which transparent adhesive layers (41) are used to bond the first principal surfaces (30SA) of the imaging chips (30) to a glass wafer (20W) and adhesive layers (41) are used to bond dummy chips (30D) to a peripheral region of the glass wafer (20W) where no imaging chips (30) are bonded, yielding a bonded wafer (40W); a step in which a sealing member (42) is used to fill the spaces between the imaging chips (30) and the dummy chips (30D); a step in which the bonded wafer (40W) is processed to decrease the thickness thereof; a step in which external-connection electrodes (34) connected to the electrode pads (32) via through-wiring (33) are formed on a second principal surface (30SB); and a step in which the bonded wafer (40W) is diced.