| 摘要 |
PROBLEM TO BE SOLVED: To provide an MTJ element which can dramatically reduce a write current.SOLUTION: An MTJ element comprises: a first metal layer extending in an X direction; a second metal layer which is spaced from the first metal layer and extends in a Y direction; a magnetic tunnel junction (MTJ junction) which lies between an overlapping part of the first and second metal layers and has extension parts not covered with the second metal layer, and in which three layers, a fixed layer, a barrier layer and a storage are stacked; and a yoke which mounts the second metal layer and in which both ends in the X direction contact directly or via insulators, top faces of the extension parts of the storage layer, which are not covered with the second metal layer. Planar shapes of the MTJ junction and the yoke have quantum easy axes in the X direction and the Y direction, respectively. The storage layer has relaxation junction that substantially satisfies continuity in flux reflux with the yoke at the extension parts directly or via a non-magnetic insulation layer with maintaining quantum easy axes orthogonal to each other. A YZ cross-section area of the yoke is larger than that of the storage layer. |
