发明名称 |
SUBSTRATE SUPPORT PROVIDING GAP HEIGHT AND PLANARIZATION ADJUSTMENT IN PLASMA PROCESSING CHAMBER |
摘要 |
A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support aim is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber. |
申请公布号 |
US2013323860(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213485166 |
申请日期 |
2012.05.31 |
申请人 |
ANTOLIK JERREL KENT;WANG YEN-KUN VICTOR;HOLLAND JOHN;LAM RESEARCH CORPORATION |
发明人 |
ANTOLIK JERREL KENT;WANG YEN-KUN VICTOR;HOLLAND JOHN |
分类号 |
H01L21/687;C23C16/505;H01L21/3065;H01L21/66 |
主分类号 |
H01L21/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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