SEMICONDUCTOR STRUCTURE HAVING A NITRIDE ACTIVE LAYER ON A DOPED SILICON CARBIDE HEAT SPREADER

摘要

A semiconductor structure having: a doped silicon carbide heat spreader; a semi-insulating silicon carbide layer disposed over the doped silicon carbide heat spreader; and a nitride (such as GaN, Indium nitride, Aluminum nitride) semiconductor layer disposed on the semi-insulating silicon carbide layer.