发明名称 MEMORY CELL SENSING
摘要 This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data.
申请公布号 WO2013181591(A1) 申请公布日期 2013.12.05
申请号 WO2013US43702 申请日期 2013.05.31
申请人 MICRON TECHNOLOGY, INC. 发明人 GOLDMAN, MATTHEW;KALAVADE, PRANAV;CHANDRASEKHAR, UDAY;HELM, MARK A.
分类号 G11C16/34;G11C16/06 主分类号 G11C16/34
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