METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING SELECTIVELY NITRIDED GATE DIELECTRIC LAYER

摘要

Provided is a method for manufacturing a semiconductor device having a gate insulating film which is selectively nitrided. The semiconductor device is manufactured by forming a first gate insulating film on a substrate having a first area and a second area; nitriding the first gate insulating film; exposing a part of the substrate by removing a part of the first gate insulating film of the first area; forming a second gate insulating film on a part of the substrate of the first area; performing the heat processing for the first and second gate insulating films in oxygen atmosphere; forming a high-k dielectric film on the first and second insulating films; and forming a metal gate electrode on the high-k dielectric film.