| 摘要 |
The present invention relates to a melting pot of a sapphire single crystal growth device, comprising a base melting pot made of graphite, prepared with a melting space unit; and a foreign substance prevention coating layer prepared on the surface of the base melting pot around the melting space unit. The present invention has relatively lower price, is based on a graphite material which has an excellent cutting property, and is equipped with a metal or ceramic coating layer capable of blocking a leakage of foreign substance from the graphite material at the melting point of sapphire, which has an effect preventing separation or leakage of foreign substance at high temperatures, and providing an inexpensive melting pot. |
