| 摘要 |
The present invention provides a p-type zinc oxide thin film that is clearly shown to be a p-type semiconductor based on the magnetic field dependence of the Hall voltage in the measurement of the Hall effect using a Hall bar, as well as a method for producing such a thin film with good reproducibility, and a light-emitting element thereof, and the present invention relates to the method for producing a p-type zinc oxide semiconductor thin film, for which combination is effected between a high temperature annealing step for activating a p-type dopant added to a zinc oxide thin film in order to develop the p-type semiconductor properties of zinc oxide or irradiating the thin film with an active species of p-type dopant to dope the film while the p-type dopant is active, and a low temperature annealing step in an oxidizing atmosphere, whereby conversion to a p-type semiconductor is realized, and relates to a p-type zinc oxide thin film thus produced using this method and a light-emitting element thereof, the present invention thereby affording a highly reliable p-type zinc oxide thin film, method of producing the same, and blue light-emitting element thereof. |
