发明名称 Coated-type silicon-containing film stripping process
摘要 <p>There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).</p>
申请公布号 EP2196858(B1) 申请公布日期 2013.12.04
申请号 EP20090015145 申请日期 2009.12.07
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OGIHARA, TSUTOMU;UEDA, TAKAFUMI;YANO, TOSHIHARU;SHIRAI, SHOZO
分类号 G03F7/42;G03F7/075;G03F7/11 主分类号 G03F7/42
代理机构 代理人
主权项
地址