发明名称 |
Coated-type silicon-containing film stripping process |
摘要 |
<p>There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).</p> |
申请公布号 |
EP2196858(B1) |
申请公布日期 |
2013.12.04 |
申请号 |
EP20090015145 |
申请日期 |
2009.12.07 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA, TSUTOMU;UEDA, TAKAFUMI;YANO, TOSHIHARU;SHIRAI, SHOZO |
分类号 |
G03F7/42;G03F7/075;G03F7/11 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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