| 摘要 |
<p>To provide a sealing glass for a semiconductor device, a sealing material and a sealing material paste, which make it possible to suppress deposition of metals by reduction of glass components (metal oxides) without decreasing the reactivity with and the adhesion to a semiconductor substrate. The sealing glass for a semiconductor device comprises low temperature melting glass having a softening point of at most 430°C. The low temperature melting glass comprises, by mass ratio, from 0.1 to 5% of an oxide of at least one metal selected from the group consisting of Fe, Mn, Cr, Co, Ni, Nb, Hf, W, Re and rare earth elements, and from 5 to 100 ppm by mass ratio of K 2 O. Further, the above group may further contain Mo. The sealing material for a semiconductor device comprises the sealing glass and an inorganic filler in an amount of from 0 to 40% by volume ratio. The sealing material paste for a semiconductor device comprises a mixture of the sealing material and a vehicle.</p> |
