| 摘要 |
<p>Provided are a memory cell array and a variable resistive memory device. The present embodiment includes a pair of word lines, an interline insulating layer formed between the pair of word lines, and a memory group including active fillers surrounded by the word lines and touching each contact surface of the pair of the word lines and the interline insulating layer. [Reference numerals] (AA) Column direction;(BB) Line direction</p> |
