发明名称 METHOD FOR DRIVING MEMORY ELEMENT
摘要 The present invention provides a memory element which keeps a stored logic state even without supply of power. Also, the present invention easily realizes the stop of power supply to the memory element for a short time, and reduces power consumption. Data (potential) held in a node in a logic circuit can be swiftly saved on a node where one of a source and a drain of the transistor and one electrode of a capacitor included in a memory circuit are connected by lowering a potential of the other electrode of the capacitor before the transistor is turned on. In addition, by making a potential of the other electrode of the capacitor, when the transistor is in an off state, higher than a potential of the other electrode of the capacitor when the transistor is in an on state, a potential of the node to which one electrode of the capacitor is connected can be reliably held even without supply of power.
申请公布号 KR20130132271(A) 申请公布日期 2013.12.04
申请号 KR20130053128 申请日期 2013.05.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ONUKI TATSUYA
分类号 G11C11/41;G11C11/413;G11C11/4193 主分类号 G11C11/41
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