HIGH-Z STRUCTURE AND METHOD FOR CO-ALIGNMENT OF MIXED OPTICAL AND ELECTRON BEAM LITHOGRAPHIC FABRICATION LEVELS
摘要
A structure for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target. The structure including a first trench in a semiconductor substrate, the first trench extending from a top surface of the substrate into the substrate a first distance; an electron back-scattering layer in a bottom of the first trench; a dielectric capping layer in the trench over the back-scattering layer; and a second trench in the substrate, the second trench extending from the top surface of the substrate into the substrate a second distance, the second distance less than the first distance.
申请公布号
EP2102907(A4)
申请公布日期
2013.12.04
申请号
EP20070855216
申请日期
2007.12.18
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
FRIED, DAVID, MICHAEL;HERGENROTHER, JOHN, MICHAEL;MCNAB, SHAREE, JANE;ROOKS, MICHAEL, J.;TOPOL, ANNA