| 摘要 |
<p>According to one embodiment, a semiconductor light emitting device (1a-1i, 1'a-1'c) includes: a semiconductor layer (15) including a first and second surfaces (15a, 15b), and a light emitting layer (13); a p-side electrode (16) provided on the second surface; an n-side electrode (17) provided on the second surface; a first insulating film (18) covering the p-side and the n-side electrodes; a p-side wiring section (21, 23) electrically connected to the p-side electrode through the first insulating film; an n-side wiring section (22, 24) electrically connected to the n-side electrode through the first insulating film; and a phosphor layer (30) provided on the first surface. The phosphor layer has an upper surface (30a) and an oblique surface (30b-30e), the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.</p> |
