| 发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p>The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO 2 film and an Al 2 O 3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.</p> |
| 申请公布号 |
EP2669951(A1) |
申请公布日期 |
2013.12.04 |
| 申请号 |
EP20120739888 |
申请日期 |
2012.01.23 |
| 申请人 |
TOHOKU UNIVERSITY;ADVANCED POWER DEVICE RESEARCH ASSOCIATION;TOKYO ELECTRON LIMITED |
发明人 |
TERAMOTO, AKINOBU;KAMBAYASHI, HIROSHI;UEDA, HIROKAZU;MOROZUMI, YUICHIRO;HARADA, KATSUSHIGE;HASEBE KAZUHIDE;OHMI, TADAHIRO |
| 分类号 |
H01L29/78;H01L21/02;H01L21/28;H01L21/316;H01L21/336;H01L21/338;H01L29/20;H01L29/423;H01L29/51;H01L29/778;H01L29/786;H01L29/812 |
主分类号 |
H01L29/78 |
| 代理机构 |
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