| 摘要 |
<p>The present invention relates to an oxide thin film transistor, a method for fabricating the same, an array substrate for a display device, and a method for fabricating the same. The present invention includes a gate electrode formed on a substrate; a gate insulating layer formed on the front surface including the gate electrode; an active layer patter formed on the gate insulating layer of the upper part of the gate electrode; an etch stop layer pattern formed on the active layer pattern; and a source part and a drain part separated from each other and formed on the etch stop layer pattern; a source electrode touching the source part and the active layer and a drain electrode touching the active layer and the drain part.</p> |
